深圳市伟图实业有限公司

Part Number

Product small description

Config/ Polarity

ESD Diodes Y/N

V DS (V)

V GS (±V)

I DS @ T A = +25°C (A)

P D @ T A = +25°C (W)

R DS(ON) Max (mΩ) @ V GS (10V)

R DS(ON) Max (mΩ) @ V GS (4.5V)

C ISS Typ @ V DS = 15V (pF)

Q G Typ @ V GS = 10V (pF)

Package Outlines

DMG4710SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N + Schottky

N

30

12

12.7

1.54

12.5

14.8

1849

43

SO-8

DMG4712SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N + Schottky

N

30

12

11.2

1.55

14

15.4

2296

46

SO-8

DMG4812SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N + Schottky

N

30

12

8

1.54

15

18.5

1849

43

SO-8

DMG4932LSD

ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Dual N Channel

N

30

12;25

9.5

1.19

15

18

1932;675

42;16

SO-8

DMG7702SFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N Channel

N

30

20

16

0.89

10

15

1296

31.6

POWERDI3333-8

DMS3012SFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N Channel

N

30

20

16

0.89

10

15

1296

31.6

POWERDI3333-8

DMS3014SFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET

N Channel

N

30

12

10.2

1

13

14

2296

19.3

POWERDI3333-8

DMS3014SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N + Schottky

N

30

12

10.4

1.55

13

14

2296

45.7

SO-8

DMS3015SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N + Schottky

N

30

20

11

1.55

11.9

14.9

1276

30.6

SO-8

DMS3016SFG

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N Channel

N

30

12

10.2

0.98

13

16

1886

44.6

POWERDI3333-8

DMS3016SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

N + Schottky

N

30

12

9.8

1.54

13

16

1849

43

SO-8

DMS3017SSD

ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Dual N Channel

N

30

20

10;7.2

1.79

12

15

1276;478.9

30.6;10.5

SO-8

DMS3019SSD

ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Dual N Channel

N

30

12;20

9;7

1.79

15

18

1932;478.9

42;10.5

SO-8